IR2130/IR2132(J)(S) & (PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to V S0 . The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 50 through 53.
Symbol
V B1,2,3
V S1,2,3
V HO1,2,3
V CC
V SS
V LO1,2,3
V IN
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Ground
Low Side Output Voltage
Logic Input Voltage ( HIN1,2,3 , LIN1,2,3 & ITRIP)
Min.
-0.3
V B1,2,3 - 25
V S1,2,3 - 0.3
-0.3
V CC - 25
-0.3
V SS - 0.3
Max.
625
V B1,2,3 + 0.3
V B1,2,3 + 0.3
25
V CC + 0.3
V CC + 0.3
(V SS + 15) or
Units
V
(V CC + 0.3)
whichever is
lower
V FLT
V CAO
V CA-
FAULT Output Voltage
Operational Amplifier Output Voltage
Operational Amplifier Inverting Input Voltage
V SS - 0.3
V SS - 0.3
V SS - 0.3
V CC + 0.3
V CC + 0.3
V CC + 0.3
dV S /dt
Allowable Offset Supply Voltage Transient
50
V/ns
P D
Rth JA
T J
Package Power Dissipation @ T A ≤ +25 ° C
Thermal Resistance, Junction to Ambient
Junction Temperature
(28 Lead DIP)
(28 Lead SOIC)
(44 Lead PLCC)
(28 Lead DIP)
(28 Lead SOIC)
(44 Lead PLCC)
1.5
1.6
2.0
83
78
63
150
W
° C/W
T S
T L
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
-55
150
300
° C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to V S0 . The V S offset rating is tested
with all supplies biased at 15V different ial. Typical ratings at other bias conditions are shown in Figure 54.
Symbol
Definition
Min.
Max.
Units
V B1,2,3
V S1,2,3
High Side Floating Supply Voltage V S1,2,3 + 10 V S1,2,3 + 20
High Side Floating Offset Voltage Note 1 600
V HO1,2,3
High Side Floating Output Voltage                                                                         V S1,2,3
V B1,2,3
V CC
V SS
V LO1,2,3
Low Side and Logic Fixed Supply Voltage 10 20
Logic Ground -5 5
Low Side Output Voltage 0 V CC
V IN
V FLT
V CAO
V CA-
Logic Input Voltage ( HIN1,2,3 , LIN1,2,3 & ITRIP) V SS
FAULT Output Voltage V SS
Operational Amplifier Output Voltage V SS
Operational Amplifier Inverting Input Voltage V SS
V SS + 5
V CC
V SS + 5
V SS + 5
V
T A
Ambient Temperature -40 125
° C
Note 1: Logic operational for V S of (V S0 - 5V) to (V S0 + 600V). Logic state held for V S of (V S0 - 5V) to (V S0 - V BS ).
(Please refer to the Design Tip DT97-3 for more details).
Note 2: All input pins, CA- and CAO pins are internally clamped with a 5.2V zener diode.
2
www.irf.com
相关PDF资料
IR2132JTR IC DRIVER BRIDGE 3-PHASE 44-PLCC
IR21363JPBF IC DRIVER 3-PHASE 44-PLCC
IR21364JTRPBF IC DRIVER BRIDGE 3PHASE 44-PLCC
IR2136JPBF IC DRIVER BRIDGE 3PHASE 44PLCC
IR2151STR IC DRVR HALF BRDG SELF-OSC 8SOIC
IR2152 IC DRVR HALF BRDG SELF-OSC 8-DIP
IR21531STRPBF IC DRIVER HALF BRIDGE OSC 8SOIC
IR2153DPBF IC DVR HALF BRDG SELF-OSC 8-DIP
相关代理商/技术参数
IR2132PbF 功能描述:功率驱动器IC 3 PHASE DRVR INVERTING INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2132S 功能描述:IC DRIVER BRIDGE 3-PHASE 28-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR2132SPbF 功能描述:功率驱动器IC 3 PHASE DRVR INVERTING INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2132STR 功能描述:IC DRIVER BRIDGE 3-PHASE 28-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2132STRPBF 功能描述:功率驱动器IC 3 PHASE DRVR INVERTING INPUT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2133 功能描述:IC DRIVER BRIDGE 3-PHASE 28-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2133J 功能描述:IC DRIVER BRIDGE 3-PHASE 44-PLCC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR2133JPbF 功能描述:功率驱动器IC 3 PHASE DRVR HI & LO SIDE INPUTS RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube